A new route for the synthesis of Culn0.5Ga0.5Se2 powder for solar cell applications
Identifieur interne : 004768 ( Main/Repository ); précédent : 004767; suivant : 004769A new route for the synthesis of Culn0.5Ga0.5Se2 powder for solar cell applications
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Abstract
In this paper, a new and simple method is described that does not use an autoclave to synthesize copper indium gallium diselenide (Culn0.5Ga0.5Se2) particles from the constituent elements. The process also does not require a post-synthesis selenization step. A solvo-thermal route is followed in which the constituent element powders are dissolved and made to react in a solvent such as ethylenediamine (ED), or triethylenetetramine (TETA). Crystal structure, morphology, composition, and particle size distribution of prepared particles were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and dynamic light scattering (DLS), respectively. The band gap energies of the prepared particles were determined using an UV-VIS-NIR spectrophotometer. The results indicate that the solvent temperature and the synthesis time significantly affect the formation of single-phase Culn0.5Ga0.5Se2 and the crystallinity of the particles. Further, the measured band gap energy for the prepared particles is close to that of the bulk material. For example, the single-phase plate-like CuIn0.5Ga0.5Se2 particles with an average particle size of 413.9 nm which can be successfully synthesized at a temperature of 250°C in 15 h, have a band gap energy of 1.15 eV.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A new route for the synthesis of Culn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub> powder for solar cell applications</title><author><name sortKey="Yassitepe, Emre" uniqKey="Yassitepe E">Emre Yassitepe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation></author><author><name sortKey="Khalifa, Zaki" uniqKey="Khalifa Z">Zaki Khalifa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Beni-Suef University, Salah Salem Street</s1><s2>Beni-Suef- 62111</s2><s3>EGY</s3><sZ>2 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Beni-Suef- 62111</wicri:noRegion></affiliation></author><author><name sortKey="Jaffari, G Hassnain" uniqKey="Jaffari G">G. Hassnain Jaffari</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Astronomy, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation></author><author><name sortKey="Chou, Chuen Shii" uniqKey="Chou C">Chuen-Shii Chou</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Mechanical Engineering, National Pingtung University of Science and Technology</s1><s2>Pingtung 912</s2><s3>TWN</s3><sZ>4 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Pingtung 912</wicri:noRegion></affiliation></author><author><name sortKey="Zulfiqar, Sonia" uniqKey="Zulfiqar S">Sonia Zulfiqar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Chemistry, Quaid-e-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name>MUHAMMAD ILYAS SARWAR</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Chemistry, Quaid-e-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name>SYED ISMAT SHAH</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Astronomy, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0260337</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0260337 INIST</idno><idno type="RBID">Pascal:10-0260337</idno><idno type="wicri:Area/Main/Corpus">004479</idno><idno type="wicri:Area/Main/Repository">004768</idno></publicationStmt><seriesStmt><idno type="ISSN">0032-5910</idno><title level="j" type="abbreviated">Powder technol.</title><title level="j" type="main">Powder technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Autoclave</term><term>Bulk material</term><term>Crystallinity</term><term>Light scattering</term><term>Morphology</term><term>Particle size</term><term>Particle size distribution</term><term>Powder</term><term>Scanning electron microscopy</term><term>Ultraviolet radiation</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Poudre</term><term>Autoclave</term><term>Morphologie</term><term>Distribution dimension particule</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Diffusion lumière</term><term>Rayonnement UV</term><term>Cristallinité</term><term>Matériau vrac</term><term>Dimension particule</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, a new and simple method is described that does not use an autoclave to synthesize copper indium gallium diselenide (Culn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub>) particles from the constituent elements. The process also does not require a post-synthesis selenization step. A solvo-thermal route is followed in which the constituent element powders are dissolved and made to react in a solvent such as ethylenediamine (ED), or triethylenetetramine (TETA). Crystal structure, morphology, composition, and particle size distribution of prepared particles were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and dynamic light scattering (DLS), respectively. The band gap energies of the prepared particles were determined using an UV-VIS-NIR spectrophotometer. The results indicate that the solvent temperature and the synthesis time significantly affect the formation of single-phase Culn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub> and the crystallinity of the particles. Further, the measured band gap energy for the prepared particles is close to that of the bulk material. For example, the single-phase plate-like CuIn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub> particles with an average particle size of 413.9 nm which can be successfully synthesized at a temperature of 250°C in 15 h, have a band gap energy of 1.15 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0032-5910</s0></fA01><fA02 i1="01"><s0>POTEBX</s0></fA02><fA03 i2="1"><s0>Powder technol.</s0></fA03><fA05><s2>201</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A new route for the synthesis of Culn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub> powder for solar cell applications</s1></fA08><fA11 i1="01" i2="1"><s1>YASSITEPE (Emre)</s1></fA11><fA11 i1="02" i2="1"><s1>KHALIFA (Zaki)</s1></fA11><fA11 i1="03" i2="1"><s1>JAFFARI (G. Hassnain)</s1></fA11><fA11 i1="04" i2="1"><s1>CHOU (Chuen-Shii)</s1></fA11><fA11 i1="05" i2="1"><s1>ZULFIQAR (Sonia)</s1></fA11><fA11 i1="06" i2="1"><s1>MUHAMMAD ILYAS SARWAR</s1></fA11><fA11 i1="07" i2="1"><s1>SYED ISMAT SHAH</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Beni-Suef University, Salah Salem Street</s1><s2>Beni-Suef- 62111</s2><s3>EGY</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics and Astronomy, University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Mechanical Engineering, National Pingtung University of Science and Technology</s1><s2>Pingtung 912</s2><s3>TWN</s3><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>Department of Chemistry, Quaid-e-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>27-31</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13653</s2><s5>354000181184490040</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0260337</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Powder technology</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, a new and simple method is described that does not use an autoclave to synthesize copper indium gallium diselenide (Culn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub>) particles from the constituent elements. The process also does not require a post-synthesis selenization step. A solvo-thermal route is followed in which the constituent element powders are dissolved and made to react in a solvent such as ethylenediamine (ED), or triethylenetetramine (TETA). Crystal structure, morphology, composition, and particle size distribution of prepared particles were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and dynamic light scattering (DLS), respectively. The band gap energies of the prepared particles were determined using an UV-VIS-NIR spectrophotometer. The results indicate that the solvent temperature and the synthesis time significantly affect the formation of single-phase Culn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub> and the crystallinity of the particles. Further, the measured band gap energy for the prepared particles is close to that of the bulk material. For example, the single-phase plate-like CuIn<sub>0.5</sub>Ga<sub>0.5</sub>Se<sub>2</sub> particles with an average particle size of 413.9 nm which can be successfully synthesized at a temperature of 250°C in 15 h, have a band gap energy of 1.15 eV.</s0></fC01><fC02 i1="01" i2="X"><s0>001D07Q07</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Poudre</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Powder</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Polvo</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Autoclave</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Autoclave</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Autoclave</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Morphologie</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Morphology</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Morfología</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Distribution dimension particule</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Particle size distribution</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Distribución dimensión partícula</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Difracción RX</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Scanning electron microscopy</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Diffusion lumière</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Light scattering</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Difusión luz</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Rayonnement UV</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Ultraviolet radiation</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Radiación ultravioleta</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Cristallinité</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Crystallinity</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Cristalinidad</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Matériau vrac</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Bulk material</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Material a granel</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Dimension particule</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Particle size</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Dimensión partícula</s0><s5>11</s5></fC03><fN21><s1>172</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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